Sign In | Join Free | My tjskl.org.cn
China Beijing Silk Road Enterprise Management Services Co.,LTD logo
Beijing Silk Road Enterprise Management Services Co.,LTD
Beijing Silk Road Enterprise Management Services Co.,LTD
Verified Supplier

5 Years
Home > Tip Power Transistors >

3DD13005 Tip Power Transistors Switch Emitter Base Voltage 9V High Efficiency

Product Categories
Beijing Silk Road Enterprise Management Services Co.,LTD
Trust Seal
Verified Supplier
Credit Check
Supplier Assessment
Contact Now

3DD13005 Tip Power Transistors Switch Emitter Base Voltage 9V High Efficiency

Place of Origin : ShenZhen China

Brand Name : OTOMO

Certification : RoHS、SGS

MOQ : 1000-2000 PCS

Price : Negotiated

Packaging Details : Boxed

Delivery Time : 1 - 2 Weeks

Payment Terms : L/C T/T Western Union

Supply Ability : 18,000,000PCS / Per Day

Model Number : 3DD13005

Collector-Base Voltage : 700v

Junction Temperature : 150 ℃

Emitter-Base Voltage : 9V

Product name : semiconductor triode type

Collector Dissipation : 1.25W

Type : Triode Transistor

Contact Now

TO-263-3L Plastic-Encapsulate Transistors 3DD13005 TRANSISTOR (NPN)

FEATURE

Power Switching Applications

MAXIMUM RATINGS (Ta =25 Š unless otherwise noted)

Symbol Parameter Value Unit
VCBO Collector-Base Voltage 700 V
VCEO Collector-Emitter Voltage 400 V
VEBO Emitter-Base Voltage 9 V
IC Collector Current -Continuous 1.5 A
PC Collector Dissipation 1.25 W
TJ, Tstg Junction and Storage Temperature -55~+150 ℃


ELECTRICAL CHARACTERISTICS

Ta=25 Š unless otherwise specified


Ta=25 Š unless otherwise specified

Parameter Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage V(BR)CBO Ic= 1mA,IE=0 700 V
Collector-emitter breakdown voltage V(BR)CEO Ic= 10 mA,IB=0 400 V
Emitter-base breakdown voltage V(BR)EBO IE= 1mA, IC=0 9 V
Collector cut-off current ICBO VCB= 700V,IE=0 1 mA
Collector cut-off current ICEO VCE= 400V,IB=0 0.5 mA
Emitter cut-off current IEBO VEB= 9 V, IC=0 1 mA

DC current gain

 hFE(1) VCE= 5 V, IC= 0.5 A 8 40
hFE(2) VCE= 5 V, IC= 1.5A 5
Collector-emitter saturation voltage VCE(sat) IC=1A,IB= 250 mA 0.6 V
Base-emitter saturation voltage VBE(sat) IC=1A, IB= 250mA 1.2 V
Base-emitter voltage VBE IE= 2A 3 V

Transition frequency

fT

VCE=10V,Ic=100mA

f =1MHz

5

MHz
Fall time tf IC=1A,IB1=-IB2=0.2A VCC=100V 0.5 µs
Storage time ts IC=250mA 2 4 µs

CLASSIFICATION OF hFE1

Rank
Range 8-10 10-15 15-20 20-25 25-30 30-35 35-40

CLASSIFICATION OF tS

Rank A1 A2 B1 B2
Range 2-2.5 (μs ) 2.5-3(μs ) 3-3.5(μs ) 3.5-4 (μs )

TO-92 Package Outline Dimensions

Symbol Dimensions In Millimeters Dimensions In Inches
Min. Max. Min. Max.
A 4.470 4.670 0.176 0.184
A1 0.000 0.150 0.000 0.006
B 1.120 1.420 0.044 0.056
b 0.710 0.910 0.028 0.036
b1 1.170 1.370 0.046 0.054
c 0.310 0.530 0.012 0.021
c1 1.170 1.370 0.046 0.054
D 10.010 10.310 0.394 0.406
E 8.500 8.900 0.335 0.350
e 2.540 TYP. 0.100 TYP.
e1 4.980 5.180 0.196 0.204
L 14.940 15.500 0.588 0.610
L1 4.950 5.450 0.195 0.215
L2 2.340 2.740 0.092 0.108
Φ 0° 8° 0° 8°
V 5.600 REF. 0.220 REF.




Product Tags:

3DD13005 Tip Power Transistors

      

9V Tip Power Transistors

      

700v Tip Power Transistors

      
Quality 3DD13005 Tip Power Transistors Switch Emitter Base Voltage 9V High Efficiency for sale

3DD13005 Tip Power Transistors Switch Emitter Base Voltage 9V High Efficiency Images

Inquiry Cart 0
Send your message to this supplier
 
*From:
*To: Beijing Silk Road Enterprise Management Services Co.,LTD
*Subject:
*Message:
Characters Remaining: (0/3000)
 
You May Like